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Freescale Semiconductor Technical Data
Document Number: MMG3H21NT1 Rev. 0, 4/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3H21NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 0 - 6000 MHz * P1dB: 20.5 dBm @ 900 MHz * Small - Signal Gain: 19.3 dB @ 900 MHz * Third Order Output Intercept Point: 37 dBm @ 900 MHz * Single 5 Volt Supply * Active Bias * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
MMG3H21NT1
0 - 6000 MHz, 19.3 dB 20.5 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 19.3 - 18 - 10 20.5 37 2140 MHz 16 - 25 -6 19.8 34 3500 MHz 14 - 20 -8 17.7 31 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature
(2)
Symbol VCC ICC Pin Tstg TJ
Value 7 300 12 - 65 to +150 150
Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 90 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 38.6 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MMG3H21NT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 18.3 -- -- -- -- -- 75 -- Typ 19.3 - 18 - 10 20.5 37 5.5 90 5 Max -- -- -- -- -- -- 110 -- Unit dB dB dB dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3H21NT1 2 RF Device Data Freescale Semiconductor
Table 5. Functional Pin Description
Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3H21NT1 RF Device Data Freescale Semiconductor 3
50 OHM TYPICAL CHARACTERISTICS
25 Gp, SMALL-SIGNAL GAIN (dB) 0 S22 20 S11, S22 (dB) -10
15
TC = -40C
-20
10 VCC = 5 Vdc 5 0 1 2 f, FREQUENCY (GHz) 3
25C
85C
-30
S11 VCC = 5 Vdc ICC = 90 mA 0 1 2 f, FREQUENCY (GHz) 3 4
-40 4
Figure 2. Small - Signal Gain (S21) versus Frequency
23 21 Gp, SMALL-SIGNAL GAIN (dB) 900 MHz 19 17 15 13 11 9 8 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) 3500 MHz 2600 MHz 2140 MHz 1960 MHz VCC = 5 Vdc ICC = 90 mA P1dB, 1 dB COMPRESSION POINT (dBm) 21
Figure 3. Input/Output Return Loss versus Frequency
20
19
18 VCC = 5 Vdc ICC = 90 mA 17 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 160 ICC, COLLECTOR CURRENT (mA) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCC, COLLECTOR VOLTAGE (V) 38 37 36 35 34 33 32 31 30 0
Figure 5. P1dB versus Frequency
VCC = 5 Vdc ICC = 90 mA 1 MHz Tone Spacing 1 2 f, FREQUENCY (GHz) 3 4
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3H21NT1 4 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 37 36 35 34 33 32 4.5 f = 900 MHz 1 MHz Tone Spacing 4.7 4.9 5.1 5.3 5.5 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 39
38
37
36 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 35 -40 -20 0 20 40 60 80 100
VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS) 105
Figure 9. Third Order Output Intercept Point versus Case Temperature
-50
104
-60 VCC = 5 Vdc ICC = 90 mA f = 900 MHz 1 MHz Tone Spacing
-70
-80 5 7 9 11 13 15 17 19 Pout, OUTPUT POWER (dBm)
103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 90 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 11. MTTF versus Junction Temperature
-20 VCC = 5 Vdc, ICC = 90 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
10
8 NF, NOISE FIGURE (dB)
-30
6
-40
4
-50
2 0 0 1 2 f, FREQUENCY (GHz) 3 VCC = 5 Vdc ICC = 90 mA 4
-60
-70 8 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power
MMG3H21NT1 RF Device Data Freescale Semiconductor 5
50 OHM APPLICATION CIRCUIT: 30 - 300 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT Z1 C1 Z2 VCC Z3 Z4 C2
C4 RF OUTPUT
Z5
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
Z4 PCB
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 20 S21, S11, S22 (dB) 10 0 -10 S22 -20 S11 -30 0 100 200 300 400 500 f, FREQUENCY (MHz) MMG30XX Rev 2 S21 R1 VCC = 5 Vdc ICC = 90 mA C1 L1 C4 C3 C2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2, C3 C4 L1 R1 Description 0.1 F Chip Capacitors 1 F Chip Capacitor 470 nH Chip Inductor 0 Chip Resistor Part Number C0603C104J5RAC C0603C105J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Taiyo Yuden Panasonic
MMG3H21NT1 6 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT Z1 C1 Z2 VCC Z3 Z4 C2
C4 RF OUTPUT
Z5
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
Z4 PCB
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 20 10 S21, S11, S22 (dB) 0 -10 -20 S11 -30 -40 300 VCC = 5 Vdc ICC = 90 mA 800 1300 1800 2300 2800 3300 3800 MMG30XX Rev 2 f, FREQUENCY (MHz) C1 C4 C3 L1 C2 S21 R1
S22
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 56 nH Chip Inductor 0 Chip Resistor Part Number C0603C104J5RAC C0603C105J5RAC C0603C105J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic
MMG3H21NT1 RF Device Data Freescale Semiconductor 7
1.7 7.62 0.305 diameter
3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58
2.49
2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3H21NT1 8 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25C, 50 Ohm System)
f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 S11 |S11| 0.093 0.090 0.087 0.085 0.084 0.082 0.081 0.080 0.078 0.078 0.076 0.075 0.074 0.074 0.071 0.071 0.068 0.067 0.064 0.055 0.050 0.046 0.043 0.040 0.037 0.035 0.034 0.032 0.031 0.031 0.031 0.030 0.030 0.029 0.028 0.028 0.026 0.025 0.025 0.023 0.023 0.022 0.021 0.021 0.020 176.9 165.2 162.0 157.6 155.6 150.2 147.6 143.7 139.6 136.5 131.9 127.5 124.7 121.7 118.2 116.4 113.1 111.2 109.8 113.6 107.1 101.8 95.4 86.3 79.4 72.3 64.0 57.1 51.1 44.3 37.9 33.0 28.6 22.7 21.9 18.7 16.5 19.0 17.3 18.5 22.9 23.0 27.2 29.4 31.4 |S21| 10.209 10.269 10.228 10.184 10.141 10.080 10.025 9.955 9.884 9.815 9.729 9.645 9.556 9.465 9.365 9.267 9.168 9.059 8.966 8.884 8.779 8.676 8.572 8.459 8.354 8.255 8.152 8.061 7.962 7.860 7.767 7.675 7.586 7.501 7.414 7.327 7.236 7.144 7.057 6.966 6.876 6.789 6.698 6.611 6.526 S21 175.9 171.9 169.1 166.4 163.7 161.1 158.4 155.8 153.3 150.7 148.2 145.6 143.1 140.7 138.2 135.9 133.5 131.1 128.8 126.5 124.3 122.1 120.0 117.8 115.8 113.7 111.7 109.6 107.6 105.6 103.6 101.6 99.7 97.7 95.7 93.7 91.8 89.8 87.9 86.0 84.1 82.2 80.3 78.5 76.7 |S12| 0.0561 0.0565 0.0565 0.0563 0.0563 0.0561 0.0561 0.0559 0.0559 0.0557 0.0555 0.0553 0.0552 0.0550 0.0548 0.0548 0.0545 0.0543 0.0543 0.0542 0.0543 0.0543 0.0542 0.0542 0.0541 0.0541 0.0540 0.0540 0.0541 0.0541 0.0542 0.0541 0.0542 0.0543 0.0545 0.0545 0.0546 0.0547 0.0548 0.0549 0.0551 0.0552 0.0553 0.0555 0.0557 S12 0.4 - 1.4 - 2.0 - 2.5 - 3.0 - 3.4 - 3.8 - 4.3 - 4.5 - 5.1 - 5.3 - 5.9 - 6.2 - 6.5 - 6.8 - 7.0 - 7.3 - 7.6 - 7.8 - 8.2 - 8.3 - 8.5 - 8.6 - 8.9 - 9.1 - 9.3 - 9.3 - 9.5 - 9.8 - 10.0 - 10.0 - 10.3 - 10.6 - 10.7 - 11.1 - 11.4 - 11.5 - 11.8 - 12.2 - 12.4 - 12.8 - 13.0 - 13.4 - 13.7 - 14.0 |S22| 0.214 0.234 0.241 0.246 0.249 0.260 0.265 0.272 0.281 0.289 0.297 0.306 0.315 0.323 0.329 0.337 0.348 0.353 0.361 0.360 0.370 0.378 0.385 0.394 0.397 0.404 0.409 0.414 0.417 0.422 0.426 0.428 0.433 0.436 0.440 0.443 0.447 0.452 0.455 0.459 0.463 0.469 0.474 0.478 0.482 S22 - 7.4 - 17.0 - 23.4 - 29.9 - 35.4 - 40.9 - 46.5 - 50.9 - 55.7 - 60.7 - 64.6 - 69.2 - 73.0 - 77.0 - 80.8 - 84.5 - 87.9 - 91.3 - 94.5 - 98.5 - 101.2 - 103.2 - 105.6 - 107.9 - 110.1 - 112.2 - 114.5 - 116.7 - 118.6 - 121.1 - 123.3 - 125.5 - 127.9 - 130.0 - 132.5 - 134.9 - 137.3 - 139.7 - 142.2 - 144.5 - 146.9 - 149.1 - 151.4 - 153.4 - 155.4 (continued)
MMG3H21NT1 RF Device Data Freescale Semiconductor 9
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.019 0.020 0.019 0.019 0.018 0.018 0.018 0.018 0.019 0.019 0.020 0.021 0.021 0.022 0.023 0.023 0.024 0.026 0.028 0.030 0.030 0.032 0.033 0.034 0.035 0.035 0.037 0.037 0.037 0.038 0.037 0.037 0.037 0.037 35.6 39.7 42.0 48.6 52.4 59.8 66.3 73.3 81.4 86.0 93.6 101.3 107.6 113.4 120.3 127.4 134.5 139.1 145.9 149.0 155.3 157.4 162.3 167.0 169.1 171.2 172.3 173.3 172.4 171.4 170.9 169.3 166.8 161.6 |S21| 6.440 6.356 6.276 6.196 6.121 6.047 5.974 5.903 5.832 5.769 5.706 5.642 5.581 5.520 5.461 5.407 5.357 5.299 5.250 5.198 5.144 5.096 5.050 5.004 4.956 4.911 4.864 4.817 4.771 4.724 4.679 4.635 4.589 4.543 S21 74.9 73.1 71.4 69.7 68.0 66.3 64.6 62.9 61.3 59.7 58.1 56.4 54.8 53.3 51.7 50.1 48.5 47.0 45.4 43.8 42.3 40.8 39.2 37.7 36.1 34.6 33.0 31.5 30.0 28.4 26.9 25.4 23.9 22.3 |S12| 0.0558 0.0560 0.0561 0.0563 0.0564 0.0567 0.0568 0.0570 0.0572 0.0575 0.0578 0.0581 0.0584 0.0587 0.0592 0.0595 0.0600 0.0603 0.0606 0.0610 0.0613 0.0617 0.0620 0.0625 0.0629 0.0633 0.0637 0.0641 0.0644 0.0647 0.0652 0.0655 0.0659 0.0662 S12 - 14.3 - 14.6 - 15.0 - 15.2 - 15.6 - 16.0 - 16.3 - 16.6 - 16.9 - 17.2 - 17.5 - 17.8 - 18.2 - 18.5 - 19.0 - 19.1 - 19.6 - 20.1 - 20.5 - 21.1 - 21.6 - 22.0 - 22.5 - 22.9 - 23.5 - 23.9 - 24.6 - 25.1 - 25.5 - 26.3 - 26.7 - 27.4 - 28.0 - 28.6 |S22| 0.487 0.490 0.494 0.499 0.502 0.506 0.509 0.514 0.516 0.518 0.522 0.521 0.524 0.526 0.529 0.532 0.533 0.536 0.537 0.537 0.538 0.540 0.541 0.542 0.543 0.546 0.546 0.549 0.551 0.551 0.553 0.557 0.559 0.561 S22 - 157.5 - 159.5 - 161.4 - 163.1 - 164.9 - 166.6 - 168.4 - 170.1 - 171.7 - 173.4 - 174.8 - 176.5 - 177.8 - 179.3 179.1 177.9 176.5 175.2 173.8 172.3 171.2 169.9 168.6 167.3 166.1 164.6 163.3 162.1 160.7 159.2 157.8 156.3 154.6 153.3
MMG3H21NT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3H21NT1 RF Device Data Freescale Semiconductor 11
MMG3H21NT1 12 RF Device Data Freescale Semiconductor
MMG3H21NT1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Apr. 2008 * Initial Release of Data Sheet Description
MMG3H21NT1 14 RF Device Data Freescale Semiconductor
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MMG3H21NT1
Document Number: RF Device Data MMG3H21NT1 Rev. 0, 4/2008 Freescale Semiconductor
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